| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film semiconductor unit which speeds up the circuit operation of a CMOS (Complementary Metal Oxide Semiconductor) and improves display quality etc., and also to provide a liquid crystal display device and a method for manufacturing the same. SOLUTION: An active matrix substrate 1 consists of TFTs (Thin-Film Transistors) which respectively have low-concentration source and drain region (LDD (Lightly Doped Drain)) structures and optimize their areas in order to reduce the electric field intensity at a drain end. The additional decrease of the off currents of the TFTs 10 for pixels, the additional increase of the on currents of the TFTs 20 and 30 for driving circuits, the assurance of the on current and gate capacity balances of the TFTs 20 and 30 for driving circuits, etc., are achieved in addition to the effects of the LDD structures. The occurrence of display unevenness etc., therefore, is averted, and the liquid crystal display device which is further higher in the operation speed of the driving section is realized. COPYRIGHT: (C)2004,JPO |
