RISING AFTER CHEMICAL-MECHANICAL PLANARIZATION PROCESS APPLIED ON A WAFER

摘要

Method of chemical-mechanical planarization (CMP) onto a wafer having a non-metallic surface material containing at least partly silicon, comprising the following steps a) polishing the surface of the wafer using a polishing plate together with a polishing solution, the said polishing solution comprising a chemical agent for chemical attacking the said surface and abrasive particles for mechanically attacking the said surface; b) rinsing residues resulting from the polishing step; and c) final cleaning; characterized in that the rinsing solution of step b) is progressively introduced onto the wafer surface so that the chemical attack of step a) is controllably stopped before going beyond a desired planarization.