METHOD FOR FORMING PE-TEOS LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a PE-TEOS(Plasma Enhanced-Tetra Ethyl Ortho Silicate) layer of a semiconductor device is provided to reduce the temperature of a shower head and a chamber to a process point level by flowing TEOS gas into the chamber through the shower head. CONSTITUTION: A wafer cassette having a plurality of wafers is prepared(51). Predetermined atmosphere is formed in a chamber(52). The wafers are sequentially supplied to a heater table and a PE-TEOS depositing process is carried out on the wafers(54). When a cleaning start time arrives, an RF(Radio Frequency) cleaning process is carried out on the inner portion of the chamber(56,57). TEOS gas is then flowed into the chamber through a shower head in an RF power off state(58).