| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of improving efficiency in the production process, and to enable ultraminiaturization and reliability enhancement in the semiconductor device. SOLUTION: In this method for manufacturing a semiconductor device with a plurality of conductive layers laminated thereon, an insulating film 2 is formed on a substrate 1, a first conductive layer 3 is formed of a first conductive material on the insulating film 2, a second conductive layer 4 is formed of a second conductive material on the first conductive layer 3, a mask layer 5 similar in etching selectivity to the first conductive layer 3 is formed on the second conductive layer 4, the second conductive layer 4 is etched for patterning by using the mask layer 5, and the removal of the mask 5 and the patterning of the first conductive layer 3 are simultaneously carried out by etching. COPYRIGHT: (C)2004,JPO
|
