| 发明名称 |
TWO TRANSISTOR NOR DEVICE |
| 摘要 |
A NOR gate includes is constructed with two asymmetric FinFET type transistors (801, 802) instead of the conventional four-transistor NOR gate. The reduction in the number of transistors from four down to two allows for significant improvements in integrated semiconductor circuits. |
| 申请公布号 |
WO2004049445(A1) |
申请公布日期 |
2004.06.10 |
| 申请号 |
WO2003US32782 |
申请日期 |
2003.10.14 |
| 申请人 |
ADVANCED MICRO DEVICES INC. |
发明人 |
KRIVOKAPIC, ZORAN;AN, JUDY, XILIN;LIN, MING-REN;WANG, HAIHONG |
| 分类号 |
H01L27/088;H01L27/092;H01L27/12;H01L29/423;H01L29/786 |
主分类号 |
H01L27/088 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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