METHOD FOR MANUFACTURING FLASH MEMORY DEVICE BY USING FURNACE ANNEALING

摘要

PURPOSE: A method for manufacturing a flash memory device is provided to improve the re-write endurance of the flash memory device by reducing stress on flash memory cells. CONSTITUTION: A flash memory cell is formed on a semiconductor substrate(100). A first interlayer dielectric(10) is formed on the flash memory cell. The first interlayer dielectric forming operation is performed at least once or more times by using a furnace annealing as a heat treatment. The first interlayer dielectric has a multi-layer structure. The furnace annealing is performed after a top layer of the multilayer structure is formed. The furnace annealing is performed at a temperature of 600 degrees or higher.