| 摘要 |
PROBLEM TO BE SOLVED: To solve the drawback of IMPATT diode, and to reduce noise, while maintaining high power output, and to significantly improve the high-frequency characteristics and the DC/AC power conversion efficiency. SOLUTION: A compound semicondcutor is used for a material for composing the IMPATT diode and In<SB>0.53</SB>Ga<SB>0.47</SB>As is introduced to a drift region, InGaAsP to a sheet doped layer, and a superlattice, such that its valence band discontinuous quantity becomes zero to an intensifying layer. This configuration will not reduce the multiplication factor, while significantly improves noise characteristics, but can increase the response speed. COPYRIGHT: (C)2004,JPO
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