发明名称 Three- dimensional metal devices highly suspended above semiconductor substrate, their circuit model, and method for manufacturing the same
摘要 Disclosed are a three dimensional metal device floated over a semiconductor substrate, a circuit thereof, and a manufacturing method thereof. A passive electric device for wireless communications and optical communications, such as a spiral inductor, a solenoid inductor, a spiral transformer, a solenoid transformer, a micro mirror, a transmission line is floated over and apart by a few ten micrometers from the semiconductor substrate. These three dimensional metal devices remarkably decrease a signal loss to the substrate, to thereby enhance the device performance, to allow a modeling of a device separated from the substrate, and to make it possible to form an integrated circuit below the device. Further, the three dimensional metal device is manufactured in a monolithic method on the integrated circuit such that it does not affect on the integrated circuit formed therebelow.
申请公布号 US2004104449(A1) 申请公布日期 2004.06.03
申请号 US20030473555 申请日期 2003.09.29
申请人 发明人 YOON JUN-BO;YOON EUISIK;KIM CHOONG-KI;HAN CHUL-HI
分类号 H01L21/822;H01L23/522;H01L23/66;H01L27/04;H01L27/08;H01L29/00;H05K3/40;(IPC1-7):H01L21/44;H01L21/50;H01L23/24 主分类号 H01L21/822
代理机构 代理人
主权项
地址