Source-biased memory cell array

摘要

A memory cell array employs "source-biasing", wherein a bias voltage is applied to the sources of one or more FETs within a memory cell to reduce their "off" state sub-threshold leakage currents. The source-bias voltage is selectively switched between a small positive bias voltage for "off" FETs, and ground for FETs which are being read. A plurality of source-bias circuits provides the selectively switched bias voltages to the memory cells in the array.