METHOD FOR FORMING CONDUCTIVE PATTERN OF MEMORY CELL

摘要

PURPOSE: A method for forming a conductive pattern of a memory cell is provided to be capable of preventing the mis-alignment of a gate electrode at an active region and simultaneously improving electrical characteristics. CONSTITUTION: The first conductive patterns and the first oxide patterns are repeatedly arrayed to the first direction on a substrate(100). Line type nitride patterns formed to the second direction on the resultant structure. A rectangle type oxide mask pattern(124) is formed by oxidizing the first conductive pattern exposed through the nitride pattern. The nitride pattern is removed from the resultant structure. The second conductive pattern(112b) for a gate electrode is formed by selectively patterning the first conductive pattern using the oxide mask pattern as an etching mask. At this time, the second conductive pattern has a high overlap margin for a channel region, wherein the channel region exists under the first conductive pattern.