| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide alight emitting element from which the light emitted from a group III nitride-based compound semiconductor layer can be emitted easily to the outside and in which a highly crystalline group III nitride-based compound semiconductor layer can be grown stably on the whole surface of a wafer. <P>SOLUTION: After recessed and projecting sections are provided on the surface of a sapphire substrate, the surface of the substrate is flattened by filling up the recessed sections with a filler. The filler has a refractive index which is substantially equal to that of the group III nitride-based compound semiconductor or closer to that of the semiconductor than that of the light-transmissive substrate. Then the group III nitride-based compound semiconductor layer is formed on the treated surface of the substrate. <P>COPYRIGHT: (C)2004,JPO |
