| 摘要 |
<p>A semiconductor member comprises a monocrystalline semiconductor layer for forming a functional element, wherein the main plane of the monocrystalline semiconductor layer has a center line average surface roughness Ra of not more than 0.4 nm as a surface state characteristics when the main plane is washed with an aqueous ammonia-hydrogen peroxide solution in a ratio of NH4OH:H2O2:H2O of 1:1:5 by volume at a washing temperature of 85 DEG C for a washing time of 10 minutes. <IMAGE></p> |
