| 摘要 |
PROBLEM TO BE SOLVED: To provide an excellent wafer heating device, small in a temperature difference in the surface of a wafer W upon transition when the wafer W is heated in accordance with the microfabrication of the wiring pattern of a semiconductor, and uniform in a temperature distribution. SOLUTION: The one side main surface of a plate type ceramics body is utilized as the mounting surface of a wafer, a plurality of resistance heat generating bodies are provided on the other main surface or in the ceramics body while an electric power supplying unit connected electrically to the resistance heat generating body is provided, and the thickness of the outer peripheral part of the plate type ceramics body is larger than that of the central part of the wafer heating device. COPYRIGHT: (C)2004,JPO
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