| 摘要 |
PROBLEM TO BE SOLVED: To provide a borazine-based resin composition which exhibits sufficient mechanical strengths and forms an insulating film permitting to attain a lower dielectric constant than conventional ones, and the like. SOLUTION: Insulating layers 5, 7 (porous insulating films) provided in a memory capacitor cell 8 is formed between a gate electrode 3 fixed on a silicon wafer 1 and an opposite electrode 8C. The insulating layers 5, 7 are obtained by applying the borazine-based resin composition, which comprises, for example, an organic silicon borazine polymer, ethylbenzene and a poly(α-methylstyrene), by a spin-coating method and drying the coated film. COPYRIGHT: (C)2004,JPO
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