METHOD FOR REMOVING MAGNETORESISTANCE SENSOR CAP DUE TO REACTIVE-ION ETCHING

摘要

PROBLEM TO BE SOLVED: To realize a method for removing a tantalum cap from a magnetoresistance sensor by minimizing a damage to the magnetoresistance sensor and purifying a surface, on which a succeeding layer is formed. SOLUTION: The magnetoresistance sensors with ferromagnetic free layers have a tantalum cap layer in common during a manufacture. The tantalum cap layer protects the sensors during the manufacture, and is removed typically after an annealing prosecution. When the tantalum cap is removed due to a fluorine reactive-ion etching, a tantalum/fluorine byproduct having low volatility remains. The method in which an argon/hydrogen reactive-ion etching is used for removing the tantalum/fluorine byproduct is provided. The damage caused by the presence of the fluorine byproduct is reduced extremely in the obtained sensor. COPYRIGHT: (C)2004,JPO