MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE PROVIDED WITH SELF-ORIENTATION LAYER WITH SELF-ORIENTATION CHARACTERISTIC

摘要

PURPOSE: A manufacturing method of a semiconductor device is provided to improve a self-orientation characteristic by irradiating plasma of an ammonia gas and by forming a self-orientation layer on an insulating layer. CONSTITUTION: An insulating layer(10) is formed over a semiconductor substrate. A plasma of a gas having a molecular structure is excited and is irradiated on the insulating layer. Hydrogen and nitrogen are bonded in the molecular structure. A self-orientation layer(11) made of a material having a self-orientation characteristic is formed on the insulating layer. A first conductive layer made of a conductive material having the self-orientation characteristic is formed on the self-orientation layer. The gas is an ammonia gas.