| 摘要 |
PURPOSE: A method for forming a borderless contact hole is provided to improve process margin by forming a nitride spacer at the sidewall of a trench. CONSTITUTION: A trench is formed at an isolation region by patterning a pad nitride layer, a pad oxide layer(20) and a substrate(10). An oxide layer is formed on the resultant structure. An isolation layer(50) is formed by planarizing the oxide layer to expose the pad nitride layer. A recess region is formed by partially removing the isolation layer. A nitride spacer(90) is formed at sidewalls of the recess region. An insulating layer(110) and an oxide layer(120) are sequentially formed on the resultant structure. A borderless contact hole(130) is formed by etching the oxide layer and the insulating layer.
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