| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to obtain a uniform metal silicide layer by using ion implantation processing instead of deposition processing. CONSTITUTION: A gate electrode(108) is formed on a semiconductor substrate(100). A source and drain junction region(124) are formed in the substrate. A metal ion implanted region is formed on the gate electrode and the source/drain junction region by implanting metal ions. A uniform metal silicide layer(130) is formed by reacting the metal ions to silicon using annealing.
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