发明名称 Semiconductor device
摘要 A bias voltage having a positive temperature dependency is supplied to a current source that determines the operating current of a refresh timer that issues a refresh request to allow the driving current of the current source to have a positive temperature characteristic. In this manner, the refresh cycle of the refresh timer shortens the issue intervals when the temperature rises, and lengthens the issue intervals of the refresh request when the temperature decreases. Thus, the consumed current for the refresh at room temperature is reduced. Consequently, the consumed current in a self-refresh mode under the room temperature condition can be reduced.
申请公布号 US6731558(B2) 申请公布日期 2004.05.04
申请号 US20020211377 申请日期 2002.08.05
申请人 RENESAS TECHNOLOGY CORP. 发明人 YAMAUCHI TADAAKI;OKAMOTO TAKEO;MATSUMOTO JUNKO
分类号 G05F3/24;G11C7/04;G11C11/406;G11C11/407;(IPC1-7):G11C7/00 主分类号 G05F3/24
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