发明名称 OBSERVATION METHOD OF SEMICONDUCTOR DEVICE THROUGH ELECTRONIC MICROSCOPE, AND DEVICE FOR THE SAME
摘要 PROBLEM TO BE SOLVED: To provide an observation method of a semiconductor structure capable of observing a structure having large aspect ratio with higher freedom, and to provide an electronic microscope system. SOLUTION: An electronic microscope system comprises an electron microscope optical component 27 creating an image of secondary electron emitted from the semiconductor device 3 located in a visual field 37 of an object to be magnified, on a detection device 35 having a position detecting function; and an irradiation devices 55, 59 for emitting primary energy beams 51, 53, and the observation method of the semiconductor device includes a process of irradiating the primary energy beams 51, 53 at least against the object to be magnified in order to make the semiconductor device 3 emit secondary electron. The semiconductor device 3 has an upper surface with large aspect furnished by a first material 11, and a recess part having a bottom 17 furnished by a second material 13. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004134374(A) 申请公布日期 2004.04.30
申请号 JP20030272354 申请日期 2003.07.09
申请人 LEO ELEKTRONENMIKROSKOPIE GMBH 发明人 KIENZLE OLIVER;KNIPPELMEYER RAINER;MUELLER INGO
分类号 H01L21/66;G01N23/00;G01N23/225;G01Q30/02;G01Q30/04;G21K7/00;H01J37/05;H01J37/244;H01J37/28;H01J37/29;(IPC1-7):H01J37/244 主分类号 H01L21/66
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