发明名称 SEMICONDUCTOR HALL SENSOR
摘要 <p>The parallel-magnetic pole Hall sensor has greatly reduced offset. This result has been achieved by the instrumentation structure containing semi-conductor wafer (1) with n-type additional conductivity, on one of the sides of which three rectangular ohmic contacts are formed at equal distances from each other, one of which is being central (2) and one each external (3 and 4), fitted parallel to their long sides. On the entire opposite side of wafer (1), another, fourth ohmic contact (5) is formed. The two external ohmic contacts (3 and 4) are connected cross a current source. The central ohmic contact (2) and the fourth ohmic contact (5) are output (7), and the external magnetic field (8) is applied perpendicularly to the cross section of substrate (1). 1 claim, 1 figure</p>
申请公布号 BG107198(A) 申请公布日期 2004.04.30
申请号 BG20020107198D 申请日期 2002.10.16
申请人 RUMENIN CHAVDAR S. 发明人 RUMENIN, CHAVDAR S.
分类号 H01L43/04;(IPC1-7):H01L43/04 主分类号 H01L43/04
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