| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic random access memory MRAM by which data stored in a magnetic memory cell can precisely be discriminated without using a reference cell. SOLUTION: The MRAM comprises a memory cell array having magnetic memory cells arrayed in rows and columns at intersections of a wordline, a bit line, and a digit line; and a sensing amplifier for sensing the data stored in the selected magnetic memory cell. The sensing amplifier comprises a current source for supplying either first current or second current to the selected magnetic memory cell in response to a control signal, a first storage means for storing first voltage in response to a first switching signal, a second storage means for storing second voltage in response to a second switching signal, and a differential amplifier for discriminating the data stored in the magnetic memory cell by utilizing the difference between the first voltage and the second voltage. COPYRIGHT: (C)2004,JPO |
