发明名称 PHASE CHANGE MEDIA FOR HIGH DENSITY DATA STORAGE
摘要 A media device in accordance with embodiments of the present invention can provide high density data storage. In one embodiment such a media device can include a phase change media having altered resistivity where data is written to the media. The media can include an overcoat to reduce physical damage inflicted on the media from a device such as a cantilever tip in a molecular memory integrated circuit used to write to or read from the media. Data written to the media can be exist in multiple states (for example having multiple resistivity measurements), allowing digital and/or analog data to be stored on the media. Other objects, aspects and advantages of the invention can be obtained from reviewing the figures, specification and claims. This description is not intended to be a complete description of, or limit the scope of, the invention.
申请公布号 WO2004036554(A2) 申请公布日期 2004.04.29
申请号 WO2003US32793 申请日期 2003.10.15
申请人 NANOCHIP, INC. 发明人 RUST, THOMAS, F.
分类号 G11B;G11B3/00;G11B7/004;G11B7/0045;G11B9/00;G11B9/04;G11B9/06;G11B9/14;G11C11/00 主分类号 G11B
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