发明名称 MICROSWITCH AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a microswitch with excellent reliability, operating at a low switching voltage, of which the contact is made of a material other than Au. SOLUTION: The microswitch comprises a base board 10; a drain electrode 18 fitted on the surface of the base board 10, a gate electrode 17 and a source electrode 16 which are formed on the surface of base board 10; a first contact 15 formed on and in contact with the drain electrode 18 composed of a microbrush which is an aggregate of conductive pillars with a diameter of 10 to 100 nm aggregated with an area density of 10<SP>9</SP>to 10<SP>11</SP>/cm2; and a beam 23 of a cantilever structure having a fulcrum electrically connected to the source electrode 16 driven by an electrostatic force imposed on the gate electrode 17, having a second contact 24 facing the first contact 15 at the movable tip thereof. The first contact 15 is made of a gold-nickel alloy (Au-Ni alloy) having excellent reliability and durability, and the second contact 24 is made of tungsten (W) having excellent reliability and durability. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004127605(A) 申请公布日期 2004.04.22
申请号 JP20020287443 申请日期 2002.09.30
申请人 TOSHIBA CORP 发明人 ONO TOMIO;SAKAI TADASHI;SAKUMA HISASHI;SUZUKI MARIKO
分类号 B81B3/00;B81C1/00;C23C28/02;H01H1/06;H01H59/00;(IPC1-7):H01H1/06 主分类号 B81B3/00
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