SILICON-RICH LOW-HEAT-CONTRACTION SILICON-NITRIDE FOR INTEGRATED CIRCUIT

摘要

PROBLEM TO BE SOLVED: To provide a low-heat-contraction silicon-rich silicon-nitride film.

SOLUTION: A low-heat-contraction silicon-rich silicon-nitride film can contain hydrogen in a form of Si-H bond having a concentration of at least half as much again as that of hydrogen in a form of N-H bond. When boron doping apparatus is operated using a high-temperature process that typically accelerates boron diffusion, a silicon nitride film inhibits the boron diffusion in the apparatus. The low-heat-contraction silicon-rich silicon-nitride film can be used for forming a spacer in a CMOS device, used as a part of a dielectric stack to prevent short circuit in a densely mounted SRAM array, or used in the BiCMO treatment to form a base nitride layer and/or a nitride spacer for insulating a base from an emitter.

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