发明名称 |
Semiconductor device fabricating method |
摘要 |
A film formed on a surface of a wafer on which an integrated circuit is to be constructed can be planarized by using a fixed abrasive tool regardless of the width of elements of a pattern underlying the film. The fixed abrasive tool is liable to form scratches in the surface of the film. A planarizing process of the present invention employs a fixed abrasive tool containing substances harder than the film to be planarized in a content of 10 ppm or below and having a mean pore diameter of 0.2 mum or below.
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申请公布号 |
US6723144(B2) |
申请公布日期 |
2004.04.20 |
申请号 |
US20020308088 |
申请日期 |
2002.12.03 |
申请人 |
HITACHI, LTD. |
发明人 |
KATAGIRI SOUICHI;YASUI KAN;KAWAI RYOUSEI;NISHIMURA SADAYUKI;SATO MASAHIKO;KAWAMURA YOSHIO;MORIYAMA SHIGEO |
分类号 |
B24B7/22;B24D3/32;H01L21/304;H01L21/3105;H01L21/321;H01L21/768;(IPC1-7):B24D3/02;C09C1/68 |
主分类号 |
B24B7/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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