发明名称 Semiconductor device fabricating method
摘要 A film formed on a surface of a wafer on which an integrated circuit is to be constructed can be planarized by using a fixed abrasive tool regardless of the width of elements of a pattern underlying the film. The fixed abrasive tool is liable to form scratches in the surface of the film. A planarizing process of the present invention employs a fixed abrasive tool containing substances harder than the film to be planarized in a content of 10 ppm or below and having a mean pore diameter of 0.2 mum or below.
申请公布号 US6723144(B2) 申请公布日期 2004.04.20
申请号 US20020308088 申请日期 2002.12.03
申请人 HITACHI, LTD. 发明人 KATAGIRI SOUICHI;YASUI KAN;KAWAI RYOUSEI;NISHIMURA SADAYUKI;SATO MASAHIKO;KAWAMURA YOSHIO;MORIYAMA SHIGEO
分类号 B24B7/22;B24D3/32;H01L21/304;H01L21/3105;H01L21/321;H01L21/768;(IPC1-7):B24D3/02;C09C1/68 主分类号 B24B7/22
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