发明名称 APPARATUS FOR DETECTING DRY ETCH END POINT FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PURPOSE: An apparatus for detecting a dry etch end point for manufacturing a semiconductor device is provided to be capable of removing the need of additional sensors for simplifying the structure of a chamber. CONSTITUTION: A semiconductor device manufacturing system is provided with a high frequency power generation part(10) for generating high frequency power and a chamber(16) by using the high frequency power, and an apparatus for detecting dry etch end point. At this time, the dry etching end point detecting apparatus includes an impedance change detector(14) connected between the high frequency power generation part and the chamber for outputting an impedance change detection signal for a dry etching end point when the load impedance of the chamber changes over a predetermined value.
申请公布号 KR20040032410(A) 申请公布日期 2004.04.17
申请号 KR20020061533 申请日期 2002.10.09
申请人 ANAM SEMICONDUCTOR., LTD. 发明人 KIM, BAEK WON;SHIN, JUNG UK
分类号 H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/66
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