| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to enhance a capacitance per unit area by forming a capacitor in a trench and using a thermal oxide layer as a dielectric film. CONSTITUTION: A trench is formed by selectively etching a substrate(100). A dielectric film(110) is formed on the trench by performing a thermal oxidation processing. After forming a gate oxide layer(140), a gate electrode of a transistor and an upper electrode of a capacitor are simultaneously formed. Spacers(180) are formed at both sidewalls of the upper electrode and the gate electrode. After forming a source and drain region(195) in the substrate, an interlayer dielectric(200) is formed on the entire surface of the resultant structure. Contact holes of the transistor and the capacitor are formed by selectively etching the interlayer dielectric(200). A plug(220) is then formed by filling a metal film into the contact holes.
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