| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which improves the electric activation rate of impurities and uses an impurity-doped layer deterring impurities from being diffused. SOLUTION: First impurities 61 having covalent bond radii larger than the covalent bond radius of a semiconductor atom 51, and second impurities 62 having covalent bond radii smaller than the covalent bond radius of the semiconductor atom 51, are arranged in a semiconductor adjacent to each other. COPYRIGHT: (C)2004,JPO
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