| 摘要 |
A semiconductor memory device suitable for rapidly transferring output data from sense amplifiers to an output-buffer is disclosed. The semiconductor memory device includes a plurality of sense amplifiers respectively connected to a plurality of cell blocks. A first common output-line is connected to a first set of sense amplifiers associated with a first set of cell blocks. A second common output-line is connected to a second set of sense amplifiers associated with a second set of cell blocks. A loading selection circuit selects one of the first and second common output-lines so as to transfer output data from a selected sense amplifier, via the selected one of the first and second common output-lines, to another device, such as an output-buffer.
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