| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device whose short circuit is hardly generated at the time of directly connecting a connecting plate to a main electrode. <P>SOLUTION: This semiconductor device is provided with a semiconductor layer including a first conductivity type first semiconductor area 101, a second conductivity type base area 102, and a plurality of first conductivity type second semiconductor regions 108. Further, the device has gate wiring 104 and 110 formed through a first insulating film 103 on the semiconductor layer, a plurality of main electrodes 112 and 114 electrically connected to the plurality of second semiconductor regions 108 and insulated from the gate wiring 104 and 110. The gate wiring 104 and 110 can be arranged between them wherein their upper faces are formed so as to be higher than the upper face of the uppermost layers of the gate wiring layers 104 and 110, and a connecting plate 115 directly connected to the uppermost layers of the main electrodes 112 and 114. <P>COPYRIGHT: (C)2004,JPO |
