发明名称 |
DRY-ETCHING SYSTEM, METHOD OF CLEANING DRY-ETCHING SYSTEM, AND DEVICE AND METHOD FOR MANUFACTURING ELECTRO-OPTIC DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a dry-etching system which hardly generates a poisonous fluoride when a chamber is opened, and to provide a method of cleaning the dry-etching system. SOLUTION: Fig. 2 shows the method of cleaning the dry-etching system. The top row left figure shows a step of introducing a reactive gas 10 into an etching chamber 9. The top row right figure shows the next step of discharging the poisonous fluoride. The figures in the middle row show that the above two steps are repeated. The bottom row left figure shows that nitrogen 20 is introduced into the etching chamber 9 until the chamber 9 is filled up with the nitrogen 20 after the above two steps are repeatedly performed. When this method is used, the etching chamber 9 can be opened without anxiety, because the chamber 9 is free from the poisonous fluoride before the chamber 9 is opened by the introduction of nitrogen 20. COPYRIGHT: (C)2004,JPO
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申请公布号 |
JP2004111811(A) |
申请公布日期 |
2004.04.08 |
申请号 |
JP20020275192 |
申请日期 |
2002.09.20 |
申请人 |
SEIKO EPSON CORP |
发明人 |
MISU HITOSHI;KOBAYASHI TAKAYUKI;IWANAMI MITSUO;NAONO HIDEAKI |
分类号 |
H01L21/3065;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/3065 |
代理机构 |
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主权项 |
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地址 |
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