HEAT TREATMENT SYSTEM, PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING SUBSTRATE

摘要

A heat treatment system, a process for fabricating a semiconductor device and a process for producing a substrate in which a high-quality semiconductor device can be fabricated by reducing a slip dislocation defect occurring in the substrate during heat treatment. A substrate support (30) comprises a body section (56) and supporting parts (58). The body section (56) has a large number of mounting parts (66) extending in parallel and the supporting parts (58) are provided on the mounting parts (66). The substrates (68) are mounted on the supporting parts (58). Each supporting part (58) is made of a silicon plate having an area smaller than that of the flat plane of a substrate and being thicker than a substrate, with the deformation thereof (58) kept reduced during heat treatment. A supporting part (58) is composed of silicon, and a silicon carbide (SiC)-coated layer is formed on the substrate mounting surface of a supporting part (58).