METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor substrate for sufficiently relieving strain of an SiGe film and suppressing penetration dislocation on a region forming an element in the SiGe film formed on an Si substrate. SOLUTION: The semiconductor device forms the semiconductor substrate laminating the SiGe film 2 on a substrate Si substrate 1 (a), pattern-forms an ion implantation preventive film 3 on a region forming the element on the SiGe film (b), implants ions 4 to the semiconductor substrate forming the ion implantation preventive film 3 (c), generates the penetration dislocation caused by implantation ions except for a region forming the element by removing the ion implantation preventive film 3 and performing annealing processing (d), and prevents the penetration dislocation from generating on an element forming region. COPYRIGHT: (C)2004,JPO