CMP SLURRY COMPOSITION FOR POLISHING TUNGSTEN METAL LAYER

摘要

PURPOSE: A CMP slurry composition for polishing a tungsten layer is provided to planarize uniformly the tungsten layer by increasing the polishing efficiency for the tungsten layer in the process for forming a tungsten plug. CONSTITUTION: A CMP slurry composition for polishing a tungsten layer includes an abrasive, an oxidizing agent, a tungsten polishing accelerant, a dispersion stabilizer, and water. The CMP slurry composition for polishing the tungsten layer has pH of 2 to 9. In the CMP slurry composition for polishing the tungsten layer, the abrasive content is 0.1 to 20.0 weight percent, the oxidizing agent content is 0.1 to 10.0 weight percent, the tungsten polishing accelerant content is 0.001 to 5.0 weight percent, the dispersion stabilizer content is 0.001 to 1.0 weight percent.