| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a negative resist composition which has high sensitivity and resolution, decreased development defects and post-exposure temporal stability in pattern formation by irradiation with electron beams or extreme ultraviolet rays (EUV) in microfabrication of semiconductor devices. <P>SOLUTION: The negative resist composition includes (A) an alkali soluble resin, (B) a compound which generates an acid by irradiation with the electron beams or extreme ultraviolet rays, and (C) at least one of 2-hydroxy-2-propyl group and its acid dissociative derivative. The alkali soluble resin (A) is either (A1) a water-insoluble, alkali soluble resin containing carboxylic acid or (A2) an alkali soluble resin containing at least one of specific repeating units and repeating units including phenolic hydroxyl groups. <P>COPYRIGHT: (C)2004,JPO |
