| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that characteristic of a non-memory transistor is deteriorated by the influence of nitriding of a memory transistor. SOLUTION: The memory transistor and the non-memory transistor are formed in an identical substrate 10. A potential-jump barrier film 21a and a charge storage film 22a are arranged in the order from the side of a semiconductor region 11 in which a channel of the memory transistor is formed, in a part between the region 11 and a gate electrode 30a. A gate insulating film 21a' of a single layer is arranged in a part between a semiconductor region 11' in which a channel of the non-memory transistor is formed and a gate electrode 30a'. The potential-jump barrier film 21a of the memory transistor contains nitrogen by a ratio within a range of 5-20%, and the concentration of nitrogen contained in the semiconductor region 11' of the non-memory transistor is set to at most a prescribed allowance. COPYRIGHT: (C)2004,JPO
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