| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming wiring by which a micro wiring pattern can be formed in high accuracy and that is best suited to manufacture a semiconductor device or a wiring substrate. <P>SOLUTION: The method for forming wiring includes a step wherein a first insulation layer 41 made of electrically insulative resin material is formed on the surface of a substrate 40 and a second insulation layer 42 made of electrically insulative and photosensitive resin material is formed by stacking on the first insulation layer, a step wherein the second insulation layer is exposed and developed to form a pattern groove 44 in which the surface of the first insulation layer is exposed over the bottom surface, a step wherein a seed layer 46 for plating is formed on the surface of the second insulation layer 42 including the inside of the pattern groove and then a resist pattern 48 where the pattern groove 44 is exposed over the surface of the seed layer is formed, and a step wherein electrolytic plating is applied using the seed layer as a plating power supply layer and the pattern groove is filled with a conductor 52. Then, after removing the resist pattern, the seed layer 46 exposing over the surface of the second insulation layer is etched for removal, forming a wiring pattern made of the conductor 52 formed inside the pattern groove 44. <P>COPYRIGHT: (C)2004,JPO |
