| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of recovering etching damage in carrying out dry etching on a III-V compound semiconductor to form an electrode or the like. <P>SOLUTION: The method of recovering etching damage of a III-V compound semiconductor includes; [1] a process step of heat-treating a III-V compound semiconductor, expressed by a general formula In<SB>x</SB>Ga<SB>y</SB>Al<SB>z</SB>N (where, x+y+z=1, 0≤x≤1, 0≤y≤1, 0≤z≤1), at 600°C or higher in an inert gas atmosphere, after the semiconductor is dry etched; or [2] a method same as [1], wherein the heat treatment is carried out at 1,100°C or lower; or further [3] a method same as [1] or [2], wherein the gas used for the dry etching is an inert gas, a gas of a molecule containing a halogen element, or a mixed gas of these. <P>COPYRIGHT: (C)2004,JPO |
