| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device using a three-dimensional structure pattern is provided to be capable of considerably reducing the number of photo mask processes, forming an ultra-fine TFT(Thin Film Transistor), and improving the degree of integration. CONSTITUTION: A plurality of material layers are sequentially formed at the upper portion of a substrate for forming the vertical structure layer of a TFT(Thin Film Transistor). A three-dimensional structure pattern is formed at the upper portion of the plurality of material layers. An etching process for the three-dimensional structure pattern, a selective etching process for the plurality of material layers, and an arbitrary material layer depositing and etching process are selectively and repeatedly carried out on the resultant structure for forming the TFT and a capacitor. The TFT is made of a gate electrode(104), a gate isolating layer(106), an active channel(108), an ohmic contact layer(110), and a source/drain electrode(112). The capacitor is made of a capacitor electrode(104b), a capacitor electric layer(116), and a pixel electrode(120).
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