Power semiconductor device with high radiating efficiency

摘要

A discrete semiconductor device (1) is vertically sandwiched between an upper wall of a case body (5) and a case bottom plate (7) to be fixed inside a case. The discrete semiconductor device (1) is fitted in the case to be positioned on a predetermined portion inside the case with high accuracy. A space defined by a side surface of the discrete semiconductor device (1) and an inner wall of the case forms a duct (9) for a coolant used for cooling the discrete semiconductor device (1). The discrete semiconductor device (1), except main electrodes (2A and 2B) and signal terminals (3), is immersed in the coolant. With this structure provided is a power semiconductor device which allows an increase in radiating efficiency of a power semiconductor element and reduction in manufacturing cost.