Method and apparatus to fabricate an on-chip decoupling capacitor

摘要

A method of fabricating a decoupling capacitor includes depositing a first barrier metal on a conducting metal. The first barrier metal acts as a first electrode of the decoupling capacitor. A dielectric is deposited on the first barrier metal. A second barrier metal is deposited on the dielectric. The second barrier metal acts as a second electrode of the decoupling capacitor. A photoresist is exposed to ultraviolet light. The photoresist is applied on the second barrier metal. A mask is utilized to define an approximate shape of the decoupling capacitor. A portion of the second barrier metal is etched. A quantity of the photoresist is removed.