| 发明名称 |
Semiconductor device, annealing method, annealing apparatus and display apparatus |
| 摘要 |
The semiconductor device according to the present invention has a semiconductor layer having not smaller than two types of crystal grains different in size within a semiconductor circuit on a same substrate. |
| 申请公布号 |
US2004061149(A1) |
申请公布日期 |
2004.04.01 |
| 申请号 |
US20030668285 |
申请日期 |
2003.09.24 |
| 申请人 |
JYUMONJI MASAYUKI;MATSUMURA MASAKIYO;KIMURA YOSHINOBU;NISHITANI MIKIHIKO;HIRAMATSU MASATO;TANIGUCHI YUKIO;NAKANO FUMIKI;OGAWA HIROYUKI |
发明人 |
JYUMONJI MASAYUKI;MATSUMURA MASAKIYO;KIMURA YOSHINOBU;NISHITANI MIKIHIKO;HIRAMATSU MASATO;TANIGUCHI YUKIO;NAKANO FUMIKI;OGAWA HIROYUKI |
| 分类号 |
H01L21/324;B23K26/04;B23K26/06;B23K26/067;B23K26/073;B23K26/42;H01L21/20;H01L21/268;H01L21/336;H01L21/77;H01L29/04;H01L29/786;(IPC1-7):H01L29/80;H01L31/112 |
主分类号 |
H01L21/324 |
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