METHOD FOR FORMING SELF-ALIGN CONTACT OF SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR USING THE SAME

摘要

PURPOSE: A method for forming a self-align contact of a semiconductor device is provided to avoid a contact bridge defect, damage to a substrate and a defect caused by a short channel effect by forming a buffer layer for preventing the substrate from being damaged in an ion implantation process and to prevent consumption of an interlayer dielectric exposed to a side surface of a contact hole. CONSTITUTION: Conductive structures(102) whose uppermost layer is a nitride layer is formed on the substrate(100). A spacer(106) is formed on the sidewall of the conductive structures. An interlayer dielectric(108) is formed to fill the conductive structures. A predetermined portion of the interlayer dielectric is selectively etched to expose the substrate between the conductive structures so that a self-align contact hole(110) exposing the spacer to the side is formed. An insulation material is deposited on the side and bottom of the contact hole and on the top of the interlayer dielectric wherein the layer deposited near the inlet of the contact hole is thicker than the layer deposited on the bottom of the contact hole. Therefore, the buffer layer(112) is formed to prevent the consumption of the interlayer dielectric exposed to the side of the contact hole. The buffer layer on the bottom of the contact hole is completely removed while the buffer layer on the side of the contact hole is left by a predetermined thickness. A conductive material is deposited in the contact hole to form a contact contacting the substrate.