| 摘要 |
A method of forming an isolation trench for an integrated circuit on a semiconductor substrate includes providing a semiconductor substrate having a-pad oxide layer, a nitride layer, and a patterned photoresist layer, and removing portions of the nitride layer, pad oxide layer, and semiconductor substrate to form a trench. After the trench is formed, the patterned photoresist is removed and a first fill layer is formed inside of the trench. The first fill layer is then etched back using a wet spin etch, and a second fill layer is subsequently formed over the first fill layer.
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