发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A semiconductor device is manufactured by a method in which the number of heat treatments at a high temperature (600° C. or higher) is reduced to thereby achieve a process at a low temperature (600° C. or lower), and a simplified process and improvement in throughput are realized. An impurity region to which a rare gas element (also called a rare gas) is added is formed on a semiconductor film of a crystalline structure by using a mask. Gettering is performed in such a manner that a metallic element contained in the semiconductor film is caused to segregate in the impurity region by heat treatment. The impurity region is thereafter used as a source or drain region.
|
申请公布号 |
US6713323(B2) |
申请公布日期 |
2004.03.30 |
申请号 |
US20020058158 |
申请日期 |
2002.01.29 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;NAKAMURA OSAMU;HAMADA TAKASHI;MURAKAMI SATOSHI |
分类号 |
H01L21/20;H01L21/00;H01L21/336;H01L21/339;H01L21/77;H01L21/84;H01L27/12;H01L29/423;H01L29/49;H01L29/786;(IPC1-7):H01L21/339 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|