发明名称 Semiconductor device using high-speed sense amplifier
摘要 Disclosed is a sense amplifier arrangement that achieves high-speed access and shorter cycle time when array voltage is lowered in a DRAM. In a TG clocking sense system to separate data lines between the array side and the sense amplifier side in an early stage of a sensing period, a restore amplifier RAP is added, which amplifies data lines on the array side by referring to the data in the sense amplifier, and the restore amplifier is driven by a voltage VDH higher than the array voltage VDL. As a result, high-speed sense operation of the TG clocking system is made compatible with high-speed restore operation of overdrive system, and it is possible to achieve high-speed access operation and shorter cycle time.
申请公布号 US2004057305(A1) 申请公布日期 2004.03.25
申请号 US20030671464 申请日期 2003.09.29
申请人 HITACHI, LTD. 发明人 TAKEMURA RIICHIRO;SEKIGUCHI TOMONORI;SAKATA TAKESHI
分类号 G11C7/00;G11C7/06;G11C11/4091;G11C11/4097;(IPC1-7):G11C7/00 主分类号 G11C7/00
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