发明名称 SEMICONDUCTOR MEMORY DEVICE INDICATING INTERNAL VOLTAGE LEVEL BY USING READY/BUSY PIN
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of confirming an internal voltage level by utilizing a ready/busy pin. <P>SOLUTION: This semiconductor memory device includes a voltage level detection part, a ready/busy driver controller and a ready/busy driver. The voltage level detection part detects whether the internal voltage is at a fixed voltage level and generates a power-up signal, and the ready/busy driver controller generates a busy enable signal in response to the power-up signal. The ready/busy driver shows that the semiconductor memory device is busy in response to the busy enable signal by the ready/busy pin. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004095149(A) 申请公布日期 2004.03.25
申请号 JP20030278474 申请日期 2003.07.23
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 RI SHUN
分类号 G11C16/06;G11C5/14;G11C7/10;G11C7/24;G11C16/02;(IPC1-7):G11C16/06 主分类号 G11C16/06
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