发明名称 |
Long-wavelength photonic device with GaAsSb quantum-well layer |
摘要 |
The long-wavelength photonic device comprises an active region that includes at least one quantum-well layer of a quantum-well layer material that comprises InyGa1-yAsSb in which y>=0, and that additionally includes a corresponding number of barrier layers each of a barrier layer material that includes gallium and phosphorus. The barrier layer material has a conduction-band energy level greater than the conduction-band energy level of the quantum-well layer material and has a valence-band energy level less than the valence-band energy level of the quantum-well layer material.
|
申请公布号 |
US6711195(B2) |
申请公布日期 |
2004.03.23 |
申请号 |
US20020087422 |
申请日期 |
2002.02.28 |
申请人 |
AGILENT TECHNOLOGIES, INC. |
发明人 |
CHANG YING-LAN;CORZINE SCOTT W.;DUPUIS RUSSELL D.;NOH MIN SOO;RYOU JAE HYUN;TAN MICHAEL R. T.;TANDON ASHISH |
分类号 |
H01L33/00;H01S5/183;H01S5/34;H01S5/343;(IPC1-7):H01S5/00 |
主分类号 |
H01L33/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|