HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION EQUIPMENT CAPABLE OF CONTROLLING GENERATION OF PARTICLES ON EDGE OF SEMICONDUCTOR WAFER

摘要

PURPOSE: High density plasma chemical vapor deposition(CVD) equipment capable of controlling generation of particles on the edge of a semiconductor wafer is provided to control a defect on the edge of a semiconductor wafer due to plasma and reaction gas by installing a clamp between the wafer and the plasma so that the clamp overlaps the edge of the wafer. CONSTITUTION: An inner space of a predetermined size is defined by the outer wall(310) of a chamber. The semiconductor wafer(200) is placed on a susceptor(320) in the chamber. A gas supply unit is so disposed to confront the upper surface of the semiconductor wafer. The clamp(360) is so disposed between the plasma on the semiconductor wafer and the semiconductor wafer to overlap the edge of the semiconductor wafer.